Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Enhanced optical properties of the GaAsNÕGaAs quantum-well structure by the insertion of InAs monolayers

Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well ~QW! structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence ~PL!. Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure...

Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition

Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature

The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was studied using H, Li, C, and O ion implantation. The ion mass did not play a significant role in the stability of isolation, and a similar activation energy of ;(0.6360.03 eV) was obtained for isolation using either H or O ions. Furthermore, the isolation was stable against isochronal annealing u...

Infrared optical anisotropy of diluted magnetic Ga1−xMnxN/c-sapphire epilayers grown with a GaN buffer layer by metalorganic chemical vapor deposition

Z. G. Hu,1 A. B. Weerasekara,1 N. Dietz,1 A. G. U. Perera,1,* M. Strassburg,1,2 M. H. Kane,2,3 A. Asghar,2 and I. T. Ferguson2,3 1Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA 3School of Materials Science and Engineering, Georgia Institute of ...

Optical Excitation of Er Centers in GaN Epilayers grown by MOCVD

In this paper we present results of photoluminescence (PL), photoluminescence excitation (PLE), and time resolved PL spectroscopy of the I13/2 → I15/2 transition in Er optical centers in GaN epilayers grown by metal-organic chemical vapor deposition. Under resonance excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, the PL and PLE s...